Infineon IPN70R1K2P7SATMA1: A 700V CoolMOS Power Transistor for High-Efficiency Applications

In the relentless pursuit of higher efficiency and power density in modern electronics, the choice of power switching technology is paramount. The Infineon IPN70R1K2P7SATMA1 stands out as a premier solution, a 700V superjunction MOSFET from the revolutionary CoolMOS™ P7 family engineered to meet these demanding challenges. This transistor is specifically designed to minimize energy losses and maximize performance across a wide array of high-voltage applications.

At the core of its performance is the advanced superjunction (SJ) technology, which fundamentally redefines the relationship between on-state resistance (RDS(on)) and breakdown voltage. The IPN70R1K2P7SATMA1 boasts an exceptionally low RDS(on) of just 1.2 Ω maximum, which directly translates to reduced conduction losses. When operating at high frequencies, switching losses often become a dominant factor. Here, the P7 technology shines with its superior switching behavior and reduced gate charge (Qg), ensuring that systems can run faster and cooler, thereby pushing the boundaries of power density.

This device is not just about raw performance; it is built for robustness and reliability. The 700V drain-source voltage rating provides a formidable safety margin for operation in harsh environments, particularly in mains-powered applications where voltage spikes are common. Furthermore, its integrated ESD protection enhances its durability during handling and assembly, improving yield and long-term field reliability.

The application scope for the IPN70R1K2P7SATMA1 is vast and critical to the global energy infrastructure. It is an ideal choice for:

Switched-Mode Power Supplies (SMPS): Including server, telecom, and industrial power units requiring high efficiency.

Power Factor Correction (PFC) stages: Essential for complying with international energy efficiency regulations.

Lighting solutions: Such as high-performance LED drivers.

Industrial motor drives and inverters: Where efficiency and reliability are non-negotiable.

ICGOO

The Infineon IPN70R1K2P7SATMA1 CoolMOS™ P7 transistor is a benchmark in high-voltage power switching. By masterfully combining ultra-low conduction losses, fast switching capabilities, and robust 700V ruggedness, it provides designers with the key to unlocking new levels of efficiency and power density in their next-generation designs.

Keywords:

1. CoolMOS™ P7

2. 700V Superjunction MOSFET

3. Low RDS(on)

4. High-Efficiency

5. Power Density