Infineon IPD50R2K0CEAUMA1: A 500V CoolMOS™ Power Transistor for High-Efficiency Applications

The relentless pursuit of higher efficiency and power density in modern electronics drives continuous innovation in power semiconductor technology. At the forefront of this evolution is Infineon's IPD50R2K0CEAUMA1, a 500V CoolMOS™ CE power transistor engineered to set new benchmarks in performance for a wide array of high-efficiency applications.

This device is a member of Infineon's revolutionary CoolMOS™ CE (Commercial Excellence) family, which is renowned for its exceptional combination of low switching losses and high reliability. The cornerstone of its performance is the superjunction (SJ) technology, a design philosophy that fundamentally redefines the relationship between on-state resistance (RDS(on)) and breakdown voltage. This allows the IPD50R2K0CEAUMA1 to achieve an ultra-low typical RDS(on) of just 70 mΩ at a gate-source voltage of 10 V. This low resistance directly translates to minimized conduction losses, a primary source of heat and inefficiency in power conversion systems.

Beyond its stellar static performance, the transistor excels dynamically. It is characterized by exceptionally low gate charge (QG) and low effective output capacitance (COErss). These parameters are critical for high-frequency switching operations, as they determine the speed at which the device can be turned on and off and the energy required to do so. The low values ensure rapid switching transitions and drastically reduce switching losses, enabling system designers to push switching frequencies higher. This, in turn, allows for the use of smaller, lighter passive components like magnetics and capacitors, significantly boosting the overall power density of the end product.

The IPD50R2K0CEAUMA1 is housed in a TO-252 (DPAK) package, a industry-standard surface-mount package that offers an excellent balance between compact size and thermal performance. This makes it an ideal candidate for space-constrained applications where efficient heat dissipation is paramount. Its robust design incorporates 100% avalanche tested capability, ensuring ruggedness and resilience against voltage spikes and unpredictable operating conditions commonly encountered in real-world scenarios.

Key application areas for this high-performance MOSFET include:

Switched-Mode Power Supplies (SMPS): Particularly in server, telecom, and industrial power supplies where 80 Plus Platinum and Titanium efficiency standards are targeted.

Power Factor Correction (PFC): Essential in both interleaved and single-stage boost PFC circuits for AC-DC conversion.

Lighting: High-efficiency drivers for LED lighting systems.

Motor Control: Inverter stages for driving motors in industrial and consumer appliances.

Solar Inverters: Critical components in DC-AC conversion for photovoltaic systems.

ICGOOODFIND: The Infineon IPD50R2K0CEAUMA1 stands out as a superior component in the 500V MOSFET market. By masterfully balancing ultra-low conduction losses, minimal switching losses, and high ruggedness, it provides a critical enabling technology for designers to create the next generation of smaller, cooler, and more efficient power electronics.

Keywords: CoolMOS™, Superjunction Technology, Low RDS(on), High-Efficiency, Switching Losses.