Infineon IPD70R950CEAUMA1: High-Performance 950V CoolMOS™ Power Transistor for Demanding Applications

The relentless pursuit of higher efficiency, greater power density, and enhanced reliability in power electronics drives the need for advanced semiconductor components. At the forefront of this innovation is Infineon Technologies with its IPD70R950CEAUMA1, a 950V superjunction MOSFET that sets a new benchmark for performance in demanding applications. This Power Transistor leverages the proven CoolMOS™ P7 technology, offering engineers a superior solution to tackle the most challenging design constraints.

Engineered for robustness, the IPD70R950CEAUMA1 boasts an impressive breakdown voltage of 950V, providing a significant safety margin for operations in harsh electrical environments prone to voltage spikes and transients. This makes it an ideal cornerstone for systems operating from unstable mains supplies, such as in industrial settings or renewable energy infrastructures. A key metric where this device excels is its exceptionally low effective dynamic drain-source on-resistance (R DS(eff)). This characteristic is crucial as it directly translates to reduced conduction losses. When the device is switched at high frequencies—a necessity for compact and lightweight designs—these minimized losses ensure cooler operation and higher overall system efficiency.

The benefits of the low R DS(eff) are further amplified by outstanding switching performance. The CoolMOS™ P7 technology is optimized for fast switching speeds, which minimizes switching losses. This combination of low conduction and switching losses allows power supply designers to push the boundaries of frequency, leading to the development of smaller magnetics and capacitors. Consequently, end products can achieve a higher power density, meaning more power can be delivered from a smaller form factor.

Beyond raw performance, the IPD70R950CEAUMA1 is designed with ruggedness and longevity in mind. It features a integrated fast body diode with high softness, which enhances its reliability in circuits like power factor correction (PFC) where inductive loads are common. This intrinsic diode characteristic improves its immunity against hard commutation events, a common cause of failure in lesser MOSFETs. Furthermore, its high avalanche ruggedness ensures it can withstand unclamped inductive switching (UIS) events, providing an added layer of protection in the field.

Typical applications that benefit from its high-performance profile include:

Server & Telecom Power Supplies (SMPS): Where efficiency standards like 80 Plus Titanium are mandatory.

Industrial Power Systems: For motor drives, automation, and robust power delivery.

Electric Vehicle Charging Infrastructure: Especially in high-power DC charging stations.

Photovoltaic Inverters: For solar energy conversion, requiring high voltage blocking capability and reliability.

Lighting: High-end industrial and commercial LED driving solutions.

ICGOODFIND: The Infineon IPD70R950CEAUMA1 represents a peak in high-voltage power MOSFET technology. It masterfully balances ultra-low losses, high switching speed, and exceptional ruggedness, making it a top-tier choice for engineers designing next-generation, high-efficiency, and high-power-density systems across industrial, automotive, and renewable energy sectors.

Keywords: CoolMOS™ P7, High Voltage MOSFET, Power Density, Switching Efficiency, Superjunction Technology